The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Jun. 03, 2020
Applicant:

Tianma Japan, Ltd., Kanagawa, JP;

Inventors:

Jiro Yanase, Kanagawa, JP;

Masamichi Shimoda, Kanagawa, JP;

Yoshihiro Nonaka, Kanagawa, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/356 (2006.01); G09G 3/3266 (2016.01); G11C 19/28 (2006.01); H03K 3/012 (2006.01); H03K 19/096 (2006.01);
U.S. Cl.
CPC ...
H03K 3/356147 (2013.01); G09G 3/3266 (2013.01); G11C 19/28 (2013.01); H03K 3/012 (2013.01); H03K 3/356104 (2013.01); H03K 19/096 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0857 (2013.01); G09G 2310/0278 (2013.01); G09G 2310/0286 (2013.01);
Abstract

A circuit includes a flip-flop included in a multi-stage shift register and a control element. The flip-flop includes an output field-effect transistor, a first field-effect transistor configured to operate to supply one of a high potential and a low potential to the gate of the output field-effect transistor, and a second field-effect transistor configured to operate to supply the other one of the high potential and the low potential to the gate of the output field-effect transistor. The control element is configured to operate to make an electric current flow between the gate and a power supply in the opposite direction of an off-leakage current from at least either one of the first field-effect transistor and the second field-effect transistor in a period where the first field-effect transistor and the second field-effect transistor are off.


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