The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Jan. 21, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Joo Young Kim, Hwaseong-si, KR;
Byong Gwon Song, Seoul, KR;
Jeong Il Park, Seongnam-si, KR;
Jiyoung Jung, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); G02F 1/1368 (2006.01); H01L 27/28 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0558 (2013.01); G02F 1/1368 (2013.01); H01L 27/283 (2013.01); H01L 51/0005 (2013.01); H01L 51/0074 (2013.01);
Abstract
Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.