The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Aug. 31, 2018
Applicants:

Dow Corning Toray Co., Ltd., Tokyo, JP;

Dow Silicones Corporation, Midland, MI (US);

Inventors:

Eiji Kitaura, Chiba, JP;

Masaaki Amako, Chiba, JP;

Steven Swier, Midland, MI (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/52 (2010.01); H01L 33/56 (2010.01);
U.S. Cl.
CPC ...
H01L 33/52 (2013.01); H01L 33/56 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A method for producing a sealed optical semiconductor device makes it possible to seal an optical semiconductor element using a sealing film. The method includes: placing a sealing film on an optical semiconductor element substrate on which an optical semiconductor element is placed within a pressure reduction chamber, and the pressure within the chamber is reduced; heating the film where at least the periphery of the film is thermally fused to the surface of the optical semiconductor element placement substrate; and a step in which the reduction of pressure within the chamber is released and the optical semiconductor element placement substrate is sealed by the film. The temperature Tof the optical semiconductor element placement substrate when the reduction of pressure within the chamber is released is a temperature at which the film exhibits a tensile strength of 0.02-0.15 MPa and an elongation at break of 150-450%.


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