The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Sep. 23, 2016
Topgan Sp. Z O.o., Warsaw, PL;
Instytut Wysokich Cisnien Polskiej Akademii Nauk, Warsaw, PL;
Kafar Anna, Gdynia, PL;
Szymon Stanczyk, Gdynia, PL;
Anna Nowakowska-Siwinska, Warsaw, PL;
Marcin Sarzynski, Warsaw, PL;
Tadeusz Suski, Nowy Prazmów, PL;
Piotr Perlin, Warsaw, PL;
Abstract
The invention relates to an AlInGaN alloy based superluminescent diode, comprising a gallium nitride bulk substrate, a lower cladding layer with n-type electrical conductivity. Further it includes a lower light-guiding layer with n-type electrical conductivity, a light emitting layer, an electron blocking layer with p-type electrical conductivity, an upper light-guiding layer, an upper cladding layer with p-type electrical conductivity, and a subcontact layer with p-type electrical conductivity. The gallium nitride bulk substrate has a spatially varying surface misorientation in the relation to the crystallographic plane M in range of 0° to 10°.