The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Oct. 29, 2019
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Andrei Konstantinov, Sollentuna, SE;
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
In a general aspect, a silicon carbide (SiC) field-effect transistor (FET) can include a substrate of a first conductivity type, a drift region of the first conductivity type disposed on the substrate, a spreading layer of the first conductivity type disposed in the drift region, a body region of a second conductivity type disposed in the spreading layer, and a source region of the first conductivity type disposed in the body region. The SiC FET can further include a spacer layer of the first conductivity type disposed on the source region the body region and the spreading layer, and a lateral channel region of the first conductivity type disposed in the spacer layer. The SiC FET can also include a gate structure that includes an aluminum nitride layer disposed on the lateral channel region, and an aluminum gallium nitride layer of the second conductivity disposed on the AlN layer.