The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Jul. 11, 2019
Applicant:
Nitride Semiconductors Co., Ltd., Tokushima, JP;
Inventor:
Yoshihiko Muramoto, Tokushima, JP;
Assignee:
NITRIDE SEMICONDUCTORS CO., LTD., Tokushima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 27/32 (2006.01); H01L 33/50 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 27/3211 (2013.01); H01L 33/0025 (2013.01); H01L 33/502 (2013.01);
Abstract
A UV-LED is disclosed. The UV-LED includes a sapphire substrate, a u-GaN buffer layer formed on the sapphire substrate, an n-GaN contact layer formed on the u-GaN buffer layer, an InGaN light emitting layer formed on the n-GaN contact layer, and a p-GaN layer formed on the InGaN light emitting layer. The UV-LED has a quadrate planar shape with at least one side having a chip size of 50 μm or less.