The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Oct. 10, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Masanori Tsukamoto, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 27/11507 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); G11C 11/221 (2013.01); G11C 11/2273 (2013.01); H01L 28/60 (2013.01);
Abstract

To provide a semiconductor memory device that avoids a voltage drop caused by an oxide film formed on a surface of a semiconductor substrate, and appropriately operates even in a case where a memory cell array is formed. A semiconductor memory device including a first transistor, a capacitor provided with a pair of capacitor electrodes opposed to each other via an insulator, one of the capacitor electrodes being electrically coupled to a gate electrode of the first transistor, a second transistor in which one of a source or a drain is electrically coupled to one of a source or a drain of the first transistor and to another of the capacitor electrodes, and a plate line electrically coupled to the gate electrode of the first transistor and to the one of the capacitor electrodes.


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