The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Aug. 13, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Chih-Wei Huang, Taoyuan, TW;

Hsu-Cheng Fan, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10876 (2013.01); H01L 27/10823 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01);
Abstract

A manufacturing method for a recessed access device includes the following operations. A trenching is formed in a substrate. A gate oxide layer is formed within the substrate by oxidizing an inner surface of the trench. A first gate layer is formed in a bottom of the trench, wherein a portion of the gate oxide layer above the first gate layer is exposed from the trench. A second gate layer is formed in the trench to cover the first gate layer and the portion of the gate oxide layer and form a recess over the first gate layer, wherein the second gate layer has a vertical portion covering the portion of the gate oxide layer and a horizontal portion having an upper surface exposed from the recess. An ion implantation is performed to the horizontal portion to form a doped horizontal portion.


Find Patent Forward Citations

Loading…