The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Nov. 16, 2017
Applicant:
Hamamatsu Photonics K.k., Hamamatsu, JP;
Inventors:
Minoru Ichikawa, Hamamatsu, JP;
Kazuki Fujita, Hamamatsu, JP;
Assignee:
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); G01J 1/46 (2006.01); G01J 1/42 (2006.01); G01J 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0727 (2013.01); G01J 1/4228 (2013.01); G01J 1/46 (2013.01); G01J 2001/442 (2013.01); G01J 2001/4473 (2013.01);
Abstract
The present embodiment relates to a photon detector which includes a preamplifier having a structure capable of preventing saturation of an amplifier. The preamplifier includes an amplifier, and further includes a capacitive element, an n-type MOSFET, and a p-type MOSFET disposed on a plurality of wirings electrically connecting the input end side and the output end side of the amplifier. A control electrode of the n-type MOSFET is set to a first fixed potential V, while a control electrode of the p-type MOSFET is set to a second fixed potential V