The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Feb. 18, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jangho Lee, Hwaseong-si, KR;
Jongmin Baek, Hwaseong-si, KR;
Wookyung You, Hwaseong-si, KR;
Kyu-Hee Han, Hwaseong-si, KR;
Suhyun Bark, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed is a semiconductor device comprising a substrate, a first dielectric layer on the substrate, a first lower conductive line in the first dielectric layer, an etch stop layer on the first dielectric layer, a via-structure that penetrates the etch stop layer and connects to the first lower conductive line, a second dielectric layer on the etch stop layer, and an upper conductive line that penetrates the second dielectric layer and connects to the via-structure. The first dielectric layer includes a dielectric pattern at a level higher than a top surface of the first lower conductive line. The upper conductive line is in contact with a top surface of the etch stop layer. The etch stop layer has at an upper portion a rounded surface in contact with the via-structure.