The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Sep. 03, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Takanobu Ono, Kuwana Mie, JP;

Tsutomu Fujita, Yokkaichi Mie, JP;

Ippei Kume, Yokkaichi Mie, JP;

Akira Tomono, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/56 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01);
Abstract

A semiconductor device includes a semiconductor wafer chip, a semiconductor device layer, and a reflectance reducing layer. The semiconductor wafer chip includes a device region and a peripheral region around the device region. The peripheral region includes a plurality of voids aligned along a side surface of the semiconductor wafer chip at a predetermined depth from a first surface of the semiconductor wafer chip. The semiconductor device element layer is on the first surface in the device region. The reflectance reducing layer is on the first surface of the semiconductor wafer chip in the peripheral region, that reduces a reflection of laser light incident from a second surface of the semiconductor wafer chip.


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