The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Feb. 25, 2020
Harbin Institute of Technology, Heilongjiang, CN;
Bing Dai, Heilongjiang, CN;
Jiwen Zhao, Heilongjiang, CN;
Jiaqi Zhu, Heilongjiang, CN;
Lei Yang, Heilongjiang, CN;
Wenxin Cao, Heilongjiang, CN;
Kang Liu, Heilongjiang, CN;
Jiecai Han, Heilongjiang, CN;
Guoyang Shu, Heilongjiang, CN;
Ge Gao, Heilongjiang, CN;
Kaili Yao, Heilongjiang, CN;
Benjian Liu, Heilongjiang, CN;
Harbin Institute of Technology, Heilongjiang, CN;
Abstract
Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.