The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Mar. 10, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Suk-Soo Pyo, Hwaseong-si, KR;

Hyun Taek Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01);
Abstract

A nonvolatile memory device includes a memory cell comprising a first variable resistor having one end connected to a first node, and the other end connected to a second node through a cell transistor; and a reference cell comprising a second variable resistor having one end connected to a third node, and the other end connected to a fourth node through a reference cell transistor, wherein gates of the cell transistor and the reference cell transistor are connected to a word line. Directions of a first read current flowing in the memory cell and a direction of a second read current flowing in the reference cell are opposite to each other.


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