The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Oct. 14, 2020
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Fumiyuki Hiyama, Suntou-gun, JP;

Kaname Watariguchi, Yokohama, JP;

Kohei Makisumi, Suntou-gun, JP;

Kazuhiro Yamauchi, Suntou-gun, JP;

Yuichi Kikuchi, Suntou-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03G 21/18 (2006.01); G03G 5/05 (2006.01); G03G 15/02 (2006.01); G03G 5/00 (2006.01); G03G 15/16 (2006.01);
U.S. Cl.
CPC ...
G03G 21/1814 (2013.01); G03G 5/00 (2013.01); G03G 5/0553 (2013.01); G03G 5/0596 (2013.01); G03G 15/0233 (2013.01); G03G 15/1685 (2013.01); G03G 2215/00071 (2013.01);
Abstract

There is provided a process cartridge detachably attachable to a main body of an electrophotographic apparatus, the process cartridge including: an electrophotographic photosensitive member and a charging member, in which when average local potential differences of calculated lengths in the electrophotographic photosensitive member is calculated based on a specific method, a maximum value of the average local potential difference is 2 V or more, the charging member includes a support and an electro-conductive layer, the electro-conductive layer has a matrix and domains dispersed in the matrix, a volume resistivity ρM of the matrix is at least 1.00×10times a volume resistivity ρD of the domain, and a specific calculated length S[μm] and a specific value relating a distance between the domains D[μm] satisfy S≥3×D.


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