The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

May. 19, 2020
Applicant:

Tsinghua University, Beijing, CN;

Inventors:

Xing Zhang, Beijing, CN;

Haidong Wang, Beijing, CN;

Hexin Liu, Beijing, CN;

Assignee:

TSINGHUA UNIVERSITY, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/16 (2006.01); G01N 21/65 (2006.01); G01K 11/00 (2006.01);
U.S. Cl.
CPC ...
G01B 11/16 (2013.01); G01K 11/00 (2013.01); G01N 21/65 (2013.01);
Abstract

Provided is a Raman spectroscopy method for simultaneously measuring a temperature and a thermal stress of a two-dimensional film material in situ. The method includes: providing the two-dimensional film material including a suspended part and a supported part and measuring Raman signals of the suspended part and the supported part; establishing equations of a Raman shift with temperature and a Raman shift with thermal stress for each of the suspended part and the supported part, and solving simultaneous equations to obtain coefficients with temperature and thermal stress; and scanning a characteristic Raman spectrum field of the two-dimensional film material and obtaining a temperature distribution and a thermal stress distribution of the two-dimensional film material according to the characteristic Raman spectrum field in combination of the coefficients of the Raman shift with temperature and the Raman shift with thermal stress.


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