The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Feb. 12, 2018
Applicant:

Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, CN;

Inventors:

Xun Shi, Shanghai, CN;

Ruiheng Liu, Shanghai, CN;

Feng Hao, Shanghai, CN;

Tuo Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/46 (2006.01); C01B 19/00 (2006.01); C30B 11/02 (2006.01); C30B 11/10 (2006.01); C30B 28/02 (2006.01); C30B 33/02 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
C30B 29/46 (2013.01); C01B 19/002 (2013.01); C30B 11/02 (2013.01); C30B 11/10 (2013.01); C30B 28/02 (2013.01); C30B 33/02 (2013.01); H01L 29/24 (2013.01); C01P 2002/60 (2013.01); C01P 2004/03 (2013.01); C01P 2006/40 (2013.01);
Abstract

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): AgXSY(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.


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