The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Feb. 27, 2018
Applicant:
Sunpower Corporation, San Jose, CA (US);
Inventors:
Michael J. Defensor, Santa Rosa, PH;
Xiuwen Tu, San Jose, CA (US);
Junbo Wu, San Jose, CA (US);
David D. Smith, Campbell, CA (US);
Assignee:
SunPower Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0443 (2014.01); H01L 31/028 (2006.01); H02S 50/10 (2014.01); H01L 31/18 (2006.01); H01L 27/142 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H02S 50/10 (2014.12); H01L 31/0443 (2014.12); H01L 31/186 (2013.01); H01L 27/1421 (2013.01); H01L 31/028 (2013.01); H01L 31/068 (2013.01); Y02E 10/50 (2013.01); Y02P 70/50 (2015.11);
Abstract
A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.