The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

Jun. 10, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chih-Chao Yang, Glenmont, NY (US);

Baozhen Li, South Burlington, VT (US);

Andrew Tae Kim, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11507 (2017.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 43/02 (2006.01); H01L 45/00 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/11507 (2013.01); H01L 27/222 (2013.01); H01L 27/2463 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01);
Abstract

A void-less bottom electrode structure is formed at least partially in a via opening having a small feature size and containing a conductive landing pad structure which is composed of a metal-containing seed layer that is subjected to a reflow anneal. A metal-containing structure is located on a topmost surface of the bottom electrode structure. The metal-containing structure may be composed of an electrically conductive metal-containing material or a material stack of electrically conductive metal-containing materials. In some embodiments, the bottom electrode and the metal-containing structure collectively provide a non-volatile memory device.


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