The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Sep. 25, 2019
International Business Machines Corporation, Armonk, NY (US);
Raghuveer Patlolla, Guilderland, NY (US);
James J. Kelly, Schenectady, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device structure includes an MRAM metallization stack. A via is disposed within a dielectric cap layer that is on and in contact with the metallization stack. A liner is disposed on sidewalls and a bottom surface of the via. A recessed electrode contact is disposed within a portion of the via and in contact with a first part of the liner in contact with sidewalls of the via. A second part of the liner is in contact with the sidewalls is above a top surface of the contact. A method for forming the semiconductor device structure includes forming a via within a MRAM metallization stack. The via exposes a top surface of the second metal layer. An electrode contact is formed within a portion of the via. A cap layer is formed within a remaining portion of the via in contact with a top surface of the electrode contact.