The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Mar. 13, 2019
Toshiba Memory Corporation, Tokyo, JP;
Takeshi Iwasaki, Kuwana Mie, JP;
Akiyuki Murayama, Tokyo, JP;
Tadashi Kai, Yokohama Kanagawa, JP;
Tadaomi Daibou, Yokohama Kanagawa, JP;
Masaki Endo, Kawasaki Kanagawa, JP;
Shumpei Omine, Tokyo, JP;
Taichi Igarashi, Kawasaki Kanagawa, JP;
Junichi Ito, Yokohama Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.