The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

May. 21, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Josephine B. Chang, Bedford Hills, NY (US);

Gerald W. Gibson, Danbury, CT (US);

Mark B. Ketchen, Hadley, MA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 39/22 (2006.01); H01L 39/24 (2006.01); H01L 39/02 (2006.01); H01L 27/18 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 39/223 (2013.01); H01L 27/18 (2013.01); H01L 39/025 (2013.01); H01L 39/2493 (2013.01); H01L 28/40 (2013.01);
Abstract

A technique relates to a trilayer Josephson junction structure. A dielectric layer is on a base electrode layer that is on a substrate. A counter electrode layer is on the dielectric layer. First and second counter electrodes are formed from the counter electrode layer. First and second dielectric layers are formed from the dielectric layer. First and second base electrodes are formed from base electrode layer. The first counter electrode, first dielectric layer, and first base electrode form a first stack. The second counter electrode, second dielectric layer, and second base electrode form a second stack. A shunting capacitor is between first and second base electrodes. An ILD layer is deposited on the substrate, the first and second counter electrodes, and the first and second base electrodes. A contact bridge connects the first and second counter electrodes. An air gap is formed underneath the contact bridge by removing ILD.


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