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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11133431 B1

PDFFull Text
Date of Patent:
Sep. 28, 2021

Filed:

Nov. 15, 2019

Light emitting diode with ion implanted resistive area, manufacturing method of light emitting diode with ion implanted resistive area and display device including light emitting diode with ion implanted resistive area

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jitsuo Ota, Suwon-si, KR;

Jihoon Kang, Suwon-si, KR;

Sungtae Kim, Suwon-si, KR;

Shunsuke Kimura, Suwon-si, KR;

Yongdok Cha, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Ismail A Muse

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 31/12 (2006.01); H01L 29/26 (2006.01); H01L 27/15 (2006.01); H01L 33/10 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); H01L 25/0753 (2013.01); H01L 33/10 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An LED, a manufacturing method thereof, and a display device including an LED are provided. Specifically, the disclosure relates to a flip-chip LED with high efficiency including a current confinement structure and a manufacturing method thereof, and a display device including such an LED. In particular, a flip-chip LED according to the disclosure includes a resistive area that surrounds a light-emitting layer and restricts current flow from the light emitting layer to the sidewalls.

Find Patent Forward Citations

Ota, Jitsuo. (2021). Light emitting diode with ion implanted resistive area, manufacturing method of light emitting diode with ion implanted resistive area and display device including light emitting diode with ion implanted resistive area (U.S. Patent No. 11133431). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11133431

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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