The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

Mar. 30, 2017
Applicant:

Kao Corporation, Tokyo, JP;

Inventors:

Hiroji Hosokawa, Wakayama, JP;

Takuya Sawada, Wakayama, JP;

Yohei Shiraishi, Osaka, JP;

Assignee:

KAO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 51/44 (2006.01); H01L 51/42 (2006.01); H01L 31/054 (2014.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); H01L 31/054 (2014.12); H01L 51/426 (2013.01); H01L 51/44 (2013.01); H01L 51/444 (2013.01); H01L 51/447 (2013.01); Y02E 10/549 (2013.01);
Abstract

The present invention pertains to a light absorption layer for forming a solar cell and a photoelectric conversion element having excellent durability and photoelectric conversion efficiency in the near infrared region, and a solar cell and a photoelectric conversion element having the light absorption layer. This light absorption layer contains a perovskite compound having a band gap energy of 1.7-4.0 eV, and a quantum dot having a band gap energy equal to or higher than 0.2 eV and equal to or lower than the band gap energy of the perovskite compound.


Find Patent Forward Citations

Loading…