The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Feb. 20, 2019
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Kenichi Yoshimochi, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/40 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/20 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 21/28575 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01); H01L 29/165 (2013.01); H01L 29/402 (2013.01); H01L 29/42324 (2013.01); H01L 29/452 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/4966 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer which has a first device formation region and a second device formation region, a first HEMT which is formed in the first device formation region and has a first two-dimensional electron gas region as a channel, a second HEMT which is formed in the second device formation region and has a second two-dimensional electron gas region as a channel, and a region separation structure which is formed in the semiconductor layer and defines the first device formation region and the second device formation region.