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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11133398 B1

PDFFull Text
Date of Patent:
Sep. 28, 2021

Filed:

Oct. 11, 2019

Semiconductor device including sense insulated-gate bipolar transistor

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Akihiro Hikasa, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Gregory M. Howison

Primary Examiner:

Matthew E Gordon

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 25/16 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 23/00 (2006.01); H01L 29/861 (2006.01); H01L 29/04 (2006.01); H01L 27/082 (2006.01); H01L 23/495 (2006.01); H01L 23/482 (2006.01); H01L 29/423 (2006.01); H01L 23/40 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66333 (2013.01); H01L 23/4824 (2013.01); H01L 23/49562 (2013.01); H01L 24/06 (2013.01); H01L 24/49 (2013.01); H01L 25/16 (2013.01); H01L 27/0823 (2013.01); H01L 29/04 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/16 (2013.01); H01L 29/417 (2013.01); H01L 29/41708 (2013.01); H01L 29/42376 (2013.01); H01L 29/739 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01); H01L 23/4006 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 27/082 (2013.01); H01L 27/0825 (2013.01); H01L 29/407 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/291 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48101 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/1815 (2013.01);
Abstract

A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell.

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