The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Feb. 05, 2020
Applicant:
Iqe Plc, Cardiff, GB;
Inventors:
Andrew Clark, Mountain View, CA (US);
Rodney Pelzel, Emmaus, PA (US);
Mukul Debnath, Stokesdale, NC (US);
Rytis Dargis, Oak Ridge, NC (US);
Robert Yanka, Kernersville, NC (US);
Assignee:
IQE plc, Cardiff, GB;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01);
Abstract
A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.