The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

Jul. 23, 2020
Applicant:

Wisconsin Alumni Research Foundation, Madison, WI (US);

Inventors:

Robert J. Joynt, Madison, WI (US);

Mark G. Friesen, Middleton, WI (US);

Mark A. Eriksson, Madison, WI (US);

Susan Nan Coppersmith, Madison, WI (US);

Donald E. Savage, Madison, WI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06N 10/00 (2019.01); G06F 15/82 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); C22C 28/00 (2006.01); H01L 29/06 (2006.01); H01L 29/15 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/165 (2013.01); C22C 28/00 (2013.01); H01L 29/0665 (2013.01); H01L 29/151 (2013.01); B82Y 10/00 (2013.01);
Abstract

Semiconductor heterostructures, methods of making the heterostructures, and quantum dots and quantum computation devices based on the heterostructures are provided. The heterostructures include a quantum well of strained silicon seeded with a relatively low concentration of germanium impurities disposed between two quantum barriers of germanium or a silicon-germanium alloy. The quantum wells are characterized in that the germanium concentration in the wells has an oscillating profile that increases the valley splitting in the conduction band of the silicon quantum well.


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