The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

Jul. 15, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Ralf Siemieniec, Villach, AT;

Wolfgang Bergner, Klagenfurt, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/046 (2013.01); H01L 21/049 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device is proposed. A trench gate structure extends from a first surface into a silicon carbide semiconductor body along a vertical direction. A trench contact structure extends from the first surface into the silicon carbide semiconductor body along the vertical direction. A source region of a first conductivity type and a body region of a second conductivity type adjoin a first sidewall of the trench gate structure. A diode region of the second conductivity type adjoins a second sidewall of the trench gate structure opposite to the first sidewall. A shielding region of the second conductivity type adjoins a bottom of the trench contact structure, the shielding region being arranged at a lateral distance to the trench gate structure.


Find Patent Forward Citations

Loading…