The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

Nov. 12, 2019
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jun-Woo Hyung, Seongnam-si, KR;

Young-Cheol Jeong, Hwaseong-si, KR;

Seung-Hoon Lee, Hwaseong-si, KR;

Young-Ran Son, Seoul, KR;

Jee-Hyun Lee, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); G09G 3/3233 (2016.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 27/3265 (2013.01); H01L 27/3276 (2013.01); G09G 3/3233 (2013.01); G09G 2300/0819 (2013.01); G09G 2320/0257 (2013.01); H01L 27/1214 (2013.01); H01L 2227/323 (2013.01);
Abstract

A light emitting diode display device includes a substrate, a first layer disposed on the substrate, a first transistor disposed on the first layer and including a first gate electrode, and a light emitting diode connected to the first transistor, wherein the first layer may overlap the first gate electrode, and may include a first region including a first material and a second region including a second material different from the first material, the first material may include amorphous silicon doped with impurities, and the second material may include amorphous silicon.


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