The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Nov. 21, 2017
Iris Industries SA, Saint-Aubin-Sauges, CH;
Claude Meylan, Saint-Aubin-Sauges, CH;
IRIS INDUSTRIES SA, Saint-Aubin-Sauges, CH;
Abstract
Disclosed are methods of fabricating short-wave infrared detector arrays including readout and absorption wafers connected by a recrystallized a-Si layer. The absorber wafer includes a SWIR conversion layer with a GeSnalloy composition. Process steps realize the readout wafer and a portion of the absorption wafer, including bonding the readout wafer and a first portion of the absorption wafer. The a-Si intermediate layer linking the readout wafer and the first portion of the absorption wafer the a-Si intermediate layer is recrystallized by applying heat by a light source. The method assures a temperature profile between the light entrance surface and the CMOS electronic layer of the readout wafer maintaining readout layer temperature <350° C. during recrystallization. After the recrystallization process step the absorption wafer is completed by depositing the SWIR conversion layer. Also disclosed is a SWIR detector array realized by the method and SWIR detector array applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile