The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
May. 13, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Naoki Takizawa, Tokyo, JP;
Tomoya Saito, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/11568 (2017.01); G11C 16/04 (2006.01); H01L 27/1158 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); G11C 16/0466 (2013.01); H01L 27/1158 (2013.01); H01L 27/11573 (2013.01);
Abstract
In a semiconductor device including a plurality of memory regions formed of split-gate type MONOS memories, threshold voltages of memory cells are set to different values for each memory region. Memory cells having different threshold voltages are formed by forming a metal film, which is a work function film constituting a memory gate electrode of a memory cell in a data region, and a metal film, which is a work function film constituting a memory gate electrode of a memory cell in a code region, of different materials or different thicknesses.