The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Nov. 18, 2019
Applicant:
L. Pierre DE Rochemont, Raleigh, NC (US);
Inventor:
L. Pierre de Rochemont, Raleigh, NC (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 23/64 (2006.01); H01L 25/16 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01F 17/06 (2006.01); H01F 27/28 (2006.01); H01F 30/16 (2006.01); H01L 29/16 (2006.01); H02M 3/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 23/642 (2013.01); H01L 23/645 (2013.01); H01L 25/16 (2013.01); H01L 29/4238 (2013.01); H01L 29/7395 (2013.01); H01L 29/7803 (2013.01); H01L 29/7804 (2013.01); H01F 17/06 (2013.01); H01F 27/2804 (2013.01); H01F 30/16 (2013.01); H01L 29/1604 (2013.01); H01L 2924/0002 (2013.01); H02M 3/28 (2013.01); Y10T 428/12493 (2015.01);
Abstract
A microelectronic module that includes a semiconductor carrier including a FET that comprises a serpentine gate electrode having an elongated gate width and gate width-to-gate length ratio in access of 100 wherein resistive, capacitive, and inductive elements are embedded within the structure of the serpentine gate electrode.