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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11133190 B1

PDFFull Text
Date of Patent:
Sep. 28, 2021

Filed:

May. 04, 2018

Metal-based passivation-assisted plasma etching of iii-v semiconductors

Applicant:

Lawrence Livermore National Security, Llc, Livermore, CA (US);

Inventors:

Sara E. Harrison, Fremont, CA (US);

Clint Frye, Livermore, CA (US);

Rebecca J. Nikolic, Oakland, CA (US);

Qinghui Shao, Fremont, CA (US);

Lars F. Voss, Livermore, CA (US);

Assignee:

Lawrence Livermore National Security, LLC, Livermore, CA (US);

Attorney:

Zilka-Kotab, P.C.

Primary Examiner:

Lan Vinh

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30621 (2013.01); H01L 21/02057 (2013.01); H01L 21/02178 (2013.01); H01L 21/02241 (2013.01); H01L 21/02274 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01);
Abstract

According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.

Find Patent Forward Citations

Quick Actions:

Harrison, Sara. (2021). Metal-based passivation-assisted plasma etching of iii-v semiconductors (U.S. Patent No. 11133190). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11133190

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