The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Dec. 17, 2019
Applicant:
Vishay-siliconix, Llc., San Jose, CA (US);
Inventors:
M. Ayman Shibib, San Jose, CA (US);
Wenjie Zhang, San Jose, CA (US);
Assignee:
Vishay-Siliconix, LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); G01R 19/15 (2006.01); H01L 21/8234 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 27/02 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
G01R 19/0092 (2013.01); G01R 19/15 (2013.01); H01L 21/0217 (2013.01); H01L 21/02129 (2013.01); H01L 21/28035 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/32133 (2013.01); H01L 21/823487 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 27/088 (2013.01); H01L 29/0692 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/42372 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/7815 (2013.01);
Abstract
Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, an electronic circuit includes a vertical trench metal oxide semiconductor field effect transistor configured for switching currents of at least one amp and a current sensing field effect transistor configured to provide an indication of drain to source current of the MOSFET. A current sense ratio of the current sensing FET is at least 15 thousand and may be greater than 29 thousand.