The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Dec. 13, 2019
Applicant:

Universiti Malaya, Kuala Lumpur, MY;

Inventors:

Ahmad Shuhaimi Bin Abu Bakar, Kuala Lumpur, MY;

Mohd Adreen Shah Bin Azman Shah, Kuala Lumpur, MY;

Assignee:

Universiti Malaya, Kuala Lumpur, MY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/12 (2010.01); C30B 29/40 (2006.01); H01L 33/22 (2010.01); C30B 25/18 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

A method of depositing a coating layer comprising gallium nitride on a substrate comprising the steps of: (a) providing the substrate having a plurality of side walls and valleys; (b) forming a first layer of gallium nitride deposited on the substrate, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 400 to 500° C., such that the first layer is formed on the side walls and the valleys; and (c) forming a second layer of gallium nitride deposited on top of the first layer, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 1000 to 1200° C., to obtain the coating layer comprising the first layer of gallium nitride and the second layer of gallium nitride at a thickness ranging from 3.0 to 4.5 μm.


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