The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Sep. 05, 2019
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Eun Mee Kwon, Gyeonggi-do, KR;
Da Som Lee, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 29/7926 (2013.01); H01L 27/11582 (2013.01); H01L 29/66833 (2013.01);
Abstract
In a method of manufacturing a non-volatile memory device, a stack structure may be formed on a semiconductor substrate. The stack structure may be etched to form a contact hole through the stack structure. The contact hole may be filled with a gap-filling insulation layer. Ions may be implanted into a target position of the gap-filling insulation layer. The gap-filling insulation layer may be selectively removed to define a preliminary junction region. A junction region may be formed in the preliminary junction region.