The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

May. 16, 2019
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Chia-Hao Lee, New Taipei, TW;

Chang-Xiang Hung, Budai Township, TW;

Manoj Kumar, Dhanbad, IN;

Chih-Cherng Liao, Zhudong Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/033 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/0254 (2013.01); H01L 21/0337 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/407 (2013.01); H01L 29/66462 (2013.01);
Abstract

A semiconductor device includes a compound semiconductor layer disposed over a substrate, a protection layer disposed over the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode which penetrate through the protection layer and are disposed on the compound semiconductor layer. The semiconductor device also includes a gate field plate connecting the gate electrode and disposed over a portion of the protection layer between the gate electrode and the drain electrode. The gate field plate has an extension portion extending into the protection layer.


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