The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
May. 14, 2020
Hejian Technology (Suzhou) Co., Ltd., Suzhou, CN;
Yuan Cheng Zheng, Suzhou, CN;
Xin Huan Shi, Suzhou, CN;
HeJian Technology (Suzhou) Co., Ltd., Suzhou, CN;
Abstract
A split gate structure is disclosed. The split gate structure includes a first polysilicon, a characteristic oxide, and a second polysilicon sequentially disposed in a trench in a vertical direction upward from a bottom of the trench. An upper surface of the characteristic oxide has a height difference less than 1500 Å between a higher center portion and a lower periphery portion. The split gate structure effectively improves the breakdown performance and the IGSS performance. A power MOS device having the split gate structure and a manufacturing method of the split gate structure are also provided.