The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Sep. 20, 2019
Microsoft Technology Licensing, Llc, Redmond, WA (US);
Michael James Manfra, West Lafayette, IN (US);
Candice Fanny Thomas, Isle, FR;
MICROSOFT TECHNOLOGY LICENSING, LLC, Redmond, WA (US);
Abstract
A quantum well field-effect transistor (QWFET) includes a barrier layer, a quantum well layer, and a spacer layer. The quantum well layer is on the barrier layer. The barrier layer and the spacer layer comprise aluminum indium antimonide that is undoped. The quantum well layer comprises indium antimonide. The spacer layer is on the quantum well layer. The quantum well layer and the spacer layer are between a source contact and a drain contact. A gate contact is on a dielectric layer, which is on the spacer layer. By providing the barrier layer and the spacer layer as undoped layers, a performance of the QWFET may be improved.