The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Jan. 24, 2021
Applicant:
Guobiao Zhang, Corvallis, OR (US);
Inventor:
Guobiao Zhang, Corvallis, OR (US);
Assignees:
HangZhou HaiCun Information Technology Co., Ltd., Zhejiang, CN;
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 23/528 (2006.01); H01L 27/112 (2006.01); H01L 27/22 (2006.01); H01L 23/525 (2006.01); H01L 45/00 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 23/528 (2013.01); H01L 23/5252 (2013.01); H01L 27/11206 (2013.01); H01L 27/224 (2013.01); H01L 27/2409 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01L 45/1226 (2013.01); H01L 45/1253 (2013.01); H01L 45/16 (2013.01);
Abstract
A manufacturing method of a three-dimensional vertical memory (3D-M) includes the steps of: (A) forming a stack of interleaved lightly-doped layers and insulating layers; and, (B) a first photolithography step and an ion-implant step to form first and second regions in each lightly-doped layer. The first region, disposed around and shared by a plurality of memory holes, has a higher resistivity than the second region.