The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Nov. 04, 2016
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Shigeru Kanematsu, Kanagawa, JP;
Katsuhiko Takeuchi, Kanagawa, JP;
Masashi Yanagita, Kanagawa, JP;
Shinichi Wada, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/098 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/808 (2006.01); H01L 29/812 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/098 (2013.01); H01L 29/417 (2013.01); H01L 29/41766 (2013.01); H01L 29/778 (2013.01); H01L 29/7787 (2013.01); H01L 29/786 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H01L 29/0653 (2013.01); H01L 29/0843 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/42316 (2013.01);
Abstract
A transistor including a carrier transit layer that includes a compound semiconductor and a carrier supply layer in contact with the carrier transit layer. The carrier supply layer includes a compound semiconductor of a different type from the carrier transit layer. The transistor includes a gate electrode provided on the carrier supply layer, and a source electrode and a drain electrode provided on another surface of the carrier transit layer that is opposite to one surface on which the carrier supply layer is provided.