The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Apr. 13, 2020
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Balaji Padmanabhan, Scottsdale, AZ (US);

Kirk K. Huang, Chandler, AZ (US);

Prasad Venkatraman, Gilbert, AZ (US);

Emily M. Linehan, Gilbert, AZ (US);

Zia Hossain, Tempe, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/0882 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/7813 (2013.01); H01L 29/7835 (2013.01); H01L 29/4238 (2013.01);
Abstract

An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.


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