The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
May. 15, 2020
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Zhibai Zhong, Xiamen, CN;
Chia-En Lee, Xiamen, CN;
Jinjian Zheng, Xiamen, CN;
Jiansen Zheng, Xiamen, CN;
Chen-Ke Hsu, Xiamen, CN;
Junyong Kang, Xiamen, CN;
Xiamen Sanan Optoelectronics Technology Co., Ltd., Fujian, CN;
Abstract
A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.