The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Mar. 03, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Masato Shini, Mie Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/04 (2014.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/94 (2013.01); H01L 24/20 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first wafer, a first wiring layer, a first insulating layer, a first electrode, a second wafer, a second wiring layer, a second insulating layer, a second electrode, and a first layer. The first electrode includes a first surface, a second surface, a third surface, and a fourth surface. The second electrode includes a fifth surface, a sixth surface, a seventh surface, a second side surface, and an eighth surface. The first layer is provided between the fourth surface and a portion of the first insulating layer that surrounds the fourth surface, and is provided away from the third surface in the first direction.


Find Patent Forward Citations

Shini, Masato. (2021). Semiconductor device (U.S. Patent No. 11127711). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11127711

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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