The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Jul. 15, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Haruhiko Murakami, Tokyo, JP;
Keisuke Eguchi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/64 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/645 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/48 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48245 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12031 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/30107 (2013.01);
Abstract
An object of the present invention is to provide a semiconductor device suppressing a ringing. A semiconductor device in an embodiment 1 includes an IGBT, an SBD connected to the IGBT in series, a PND connected to the IGBT in series and parallelly connected to the SBD, and an output electrode connected between the IGBT and the SBD and between the IGBT and the PND. An anode electrode of the PND is connected to the output electrode by the wiring via an anode electrode of the SBD.