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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11127590 B1

PDFFull Text
Date of Patent:
Sep. 21, 2021

Filed:

Dec. 05, 2017

Method for ald deposition on inert surfaces via al2o3 nanoparticles

Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Iljo Kwak, La Jolla, CA (US);

Kasra Sardashti, Laguna Hills, CA (US);

Andrew Kummel, San Diego, CA (US);

Assignee:

The Regents of the University of California, Oakland, CA (US);

Attorneys:

Greer, Burns & Crain, Ltd.

Steven P. Fallon

Primary Examiner:

Bret P Chen

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/28 (2006.01); B82Y 10/00 (2011.01); H01L 29/786 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/775 (2006.01); H01L 29/51 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 43/12 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); B82Y 10/00 (2013.01); H01L 21/022 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/28194 (2013.01); H01L 21/3105 (2013.01); H01L 27/2436 (2013.01); H01L 29/0673 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/778 (2013.01); H01L 29/78603 (2013.01); H01L 29/78645 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 43/12 (2013.01); H01L 45/16 (2013.01); H01L 29/0676 (2013.01);
Abstract

A method for forming a high-k oxide includes forming a nanofog of AlOnanoparticles and conducting subsequent ALD deposition of a dielectric on the nanofog. A nanofog oxide is adhered to an inert 2D or 3D surface, the nano oxide consisting essentially of sub 1 nm AlOnanoparticles. Additional oxide layers can be formed on the nanofog. Examples are from the group of selected from the group consisting of ZrO, HfZrO, silicon or other doped HfOor ZrO, ZrTiO, HfTiO, LaO3, YO, GaO, GdGaOx, and alloys thereof, including the ferroelectric phases of HfZrO, silicon or other doped HfOor ZrO.

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