The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Mar. 12, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Yorinobu Fujino, Yokohama Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1673 (2013.01); G11C 11/1677 (2013.01); G11C 16/0425 (2013.01); G11C 16/0433 (2013.01);
Abstract

According to one embodiment, a memory device includes a resistance change memory element to which one of a low-resistance state and a high-resistance state is allowed to be set in accordance with a write current, a first transistor including a first gate, and causing a current to flow through the resistance change memory element in a first write period, a voltage holding section holding a first voltage applied to the first gate in the first write period, and a second transistor including a second gate, in which the first voltage held in the voltage holding section is applied to the second gate, thereby causing a current to flow through the resistance change memory element in a second write period after the first write period.


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