The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Jan. 14, 2020
Applicant:

Tdk-micronas Gmbh, Freiburg, DE;

Inventors:

Martin Cornils, Freiburg, DE;

Maria-Cristina Vecchi, Freiburg, DE;

Assignee:

TDK-Micronas GmbH, Freiburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/07 (2006.01); G01R 33/00 (2006.01); G01R 33/02 (2006.01);
U.S. Cl.
CPC ...
G01R 33/072 (2013.01); G01R 33/0005 (2013.01); G01R 33/0206 (2013.01);
Abstract

A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.


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