The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11125835 B1

Date of Patent:

Sep. 21, 2021

Filed:

Mar. 27, 2019

Amr-type integrated magnetoresistive sensor for detecting magnetic fields perpendicular to the chip

Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventor:

Dario Paci, Sedriano, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Neel D Shah

Int. Cl.

CPC ...

G01R 33/00 (2006.01); G01R 33/02 (2006.01); G01R 33/09 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01);

U.S. Cl.

CPC ...

G01R 33/0011 (2013.01); G01R 33/0052 (2013.01); G01R 33/093 (2013.01); G01R 33/096 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);

Abstract

An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.

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