The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Sep. 01, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
The present application relates to a technique of reducing the occurrence of a spot breakdown near a probe needle with the intention of preventing damage on the probe needle during a test implemented by applying a high voltage to a semiconductor device. In a method of measuring a semiconductor device, the semiconductor device includes: a semiconductor substrate (), an epitaxial layer (), at least one second conductivity type region () of a second conductivity type formed in a part of the surface layer of the epitaxial layer to have a contour, a Schottky electrode (), an anode electrode (), and a cathode electrode (). A voltage is applied while the probe needle () is brought into contact with the upper surface of the anode electrode in a range in which the contour of the at least one second conductivity type region is formed in a plan view.